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Silicon Carbide MOSFET IMZA65R072M1H 650 V CoolSiC M1SiC Trench Power Device

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Silicon Carbide MOSFET IMZA65R072M1H 650 V CoolSiC M1SiC Trench Power Device

Brand Name : Original Factory

Model Number : IMZA65R072M1H

Certification : Lead free / RoHS Compliant

Place of Origin : CN

MOQ : 10

Price : Contact for Sample

Payment Terms : T/T, L/C, Western Union

Delivery Time : 5-8 work days

Packaging Details : TO-247-4

Part Number : IMZA65R072M1H

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 650 V

Id - Continuous Drain Current : 28 A

Vgs th - Gate-Source Threshold Voltage : 5.7 V

Pd - Power Dissipation : 96 W

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Silicon Carbide MOSFET IMZA65R072M1H 650V CoolSiC M1SiC Trench Power Device

Product Description Of IMZA65R072M1H

IMZA65R072M1H CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The IMZA65R072M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.
IMZA65R072M1H SiC MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.

Specification Of IMZA65R072M1H

Part Number IMZA65R072M1H Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) Transistor Polarity N-Channel
Rds On - Drain-Source Resistance 94 mOhms Qg - Gate Charge 22 nC
Power Dissipation (Max) 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ)

Features Of IMZA65R072M1H

  • Optimizedswitchingbehaviorathighercurrents
  • CommutationrobustfastbodydiodewithlowQrr
  • Superiorgateoxidereliability
  • Bestthermalconductivityandbehavior
  • LowerRDS(on)andpulsecurrentdependencyontemperature
  • Increasedavalanchecapability
  • Compatiblewithstandarddrivers(recommendeddrivingvol age:18V)
  • Kelvinsourceprovidesupto4timeslowerswitchinglosses

Benefits Of IMZA65R072M1H

  • High performance, high reliability and ease of use
  • Allows high system efficiency
  • Reduces system cost and complexity
  • Enables smaller system size
  • Works in topologies with continuous hard commutation
  • Fit for high temperature and harsh operations
  • Enables bi-directional topologies

Potential Applications Of IMZA65R072M1H

  • Server
  • Telecom
  • SMPS
  • Solar energy systems
  • Energy storage and battery formation
  • UPS
  • EV charging
  • Motor drives

Diagrams Of IMZA65R072M1H

Silicon Carbide MOSFET IMZA65R072M1H 650 V CoolSiC M1SiC Trench Power Device

Package Outlines IMZA65R072M1H

Silicon Carbide MOSFET IMZA65R072M1H 650 V CoolSiC M1SiC Trench Power Device

FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.


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